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| PD - 95639 IRG4BC20SPBF INSULATED GATE BIPOLAR TRANSISTOR Features Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 10A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 19 10 38 38 20 5.0 60 24 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.50 2.0 (0.07) Max. 2.1 80 Units C/W g (oz) www.irf.com 1 7/23/04 IRG4BC20SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage 0.75 V/C VGE = 0V, IC = 1.0mA 1.40 1.6 IC = 10A VGE = 15V Collector-to-Emitter Saturation Voltage 1.85 IC = 19A See Fig.2, 5 V 1.44 IC = 10A , TJ = 150C Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, IC = 250A Forward Transconductance 2.0 5.8 S VCE = 100V, IC = 10A 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t d(on) tr t d(off) tf E ts LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 27 40 IC = 10A 4.3 6.5 nC VCC = 400V See Fig. 8 10 15 VGE = 15V 27 9.7 TJ = 25C ns 540 810 IC = 10A, VCC = 480V 430 640 VGE = 15V, RG = 50 0.12 Energy losses include "tail" 2.05 mJ See Fig. 9, 10, 14 2.17 3.2 25 TJ = 150C, 13 IC = 10A, VCC = 480V ns 760 VGE = 15V, RG = 50 780 Energy losses include "tail" 3.46 mJ See Fig. 11, 14 7.5 nH Measured 5mm from package 550 VGE = 0V 39 pF VCC = 30V See Fig. 7 7.1 = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC20SPBF 30 For both: 25 Triangular wave: Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 13W Clamp voltage: 80% of rated Load Current ( A ) 20 Square wave: 15 60% of rated voltage 10 5 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C 10 I C , Collector-to-Emitter Current (A) TJ = 150 oC 10 TJ = 25 oC 1 1 V GE = 15V 20s PULSE WIDTH 10 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20SPBF 20 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 20 A Maximum DC Collector Current(A) 15 10 2.0 5 IC = 10 A IC = 5.0A 5A 1.0 -60 -40 -20 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 0.50 0.20 0.10 0.05 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20SPBF 1000 800 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 10A 16 C, Capacitance (pF) Cies 600 12 400 8 Coes 200 4 Cres 0 1 10 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.20 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 2.16 I C = 10A 10 RG = 50Ohm VGE = 15V VCC = 480V IC = 20 A IC = 10 A IC = 5.0A 5A 1 2.12 2.08 2.04 2.00 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) () TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20SPBF 8.0 6.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE = 50Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 4.0 10 2.0 SAFE OPERATING AREA 0.0 0 4 8 12 16 20 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC20SPBF L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X I C@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4BC20SPBF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com |
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